Epitaxial Growth and Fabrication of Highly Strained Heterostructures

Download or read book Epitaxial Growth and Fabrication of Highly Strained Heterostructures written by and published by . This book was released on 2000 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: Room temperature (RT) pulsed operation of blue nitride based multi-quantum well (MQW) laser diodes grown on c-plane sapphire substrates were achieved. Emission wavelengths as long as 425nm were obtained. Atmospheric pressure MOCVD was used to grow the active region of the device which consisted of a 10 pair In(0.21)Ga(0.79)N, (2.5nm)/In(0/07)Ga(0.93)N (5nm) InGaN MQW. The threshold current density was reduced by a factor of 2 from 10 kA/sq cm for laser diodes grown on sapphire substrates to 4.8 kA/sq cm for laser diodes grown on LEO GaN on sapphire. These results show that a reduction in nonradiative recombination from a reduced dislocation density leads to a higher internal quantum efficiency. The researchers would like to thank the generous support and guidance of Dr. John Zavada. Further research on lateral epitaxial overgrowth (LEO) is needed to extend the wavelength to 490nm which is required for numerous bio-chemical sensing applications.