Silicon Carbide on Insulator Quantum Photonics with Color Centers
Author | : Daniil Lukin |
Publisher | : |
Total Pages | : |
Release | : 2022 |
ISBN-10 | : OCLC:1330250750 |
ISBN-13 | : |
Rating | : 4/5 ( Downloads) |
Download or read book Silicon Carbide on Insulator Quantum Photonics with Color Centers written by Daniil Lukin and published by . This book was released on 2022 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Color centers -- crystal defects that act as artificial atoms trapped in the solid state -- are contenders for realizing network-based quantum computation. An outstanding challenge has been the integration of color centers into scalable nanophotonic circuits, a prerequisite for efficient entanglement generation between the nodes of a quantum network. Silicon Carbide (SiC), a material traditionally used for abrasives, LEDs and transistors, has the potential to realize such circuits in a wafer-scale, CMOS-compatible platform. However, material fabrication challenges precluded the realization of high-quality SiC photonics. We overcome these limitations by developing new nanofabrication techniques and establish SiC as a high-performance classical photonics material. This development of classical photonic devices in SiC constitutes the first part of this dissertation. Then, we adapt the classical photonics techniques to fabricate devices that host coherent color centers, to demonstrate the basic building blocks of quantum networks based on color centers in SiC photonics. We isolate coherent single emitters in SiC photonic cavities, observe near-unity emitter-cavity cooperativity, and demonstrate superradiance of a pair of color centers in a single microresonator. Taken together, these results suggest that SiC is a candidate for closing the long-standing ''classical-quantum photonics gap'', characterized by a large disparity between the excellent performance of classical photonic devices and comparatively non-scalable and inefficient performance of the quantum-photonic counterparts. In the final part of the dissertation, we discuss electrical control of single color centers in SiC, a key element of the realization of homogeneous, scalable qubits compatible with large-scale, foundry-fabricated color-center quantum circuits.